Permanent reduction of dissipation in nanomechanical Si resonators by chemical surface protection.

We report on mechanical dissipation measurements carried out on thin (∼100 nm), single-crystal silicon cantilevers with varying chemical surface termination. We find that the 1-2 nm-thick native oxide layer of silicon contributes about 85% to the friction of the mechanical resonance. We show that the mechanical friction is proportional to the thickness of the oxide layer and that it crucially depends on oxide formation conditions.