Publications by authors named "P Makk"

The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute this effect to various leakage-based scenarios, giving rise to a debate on its origin. A proper understanding of the microscopic process underlying the GCS effect and the relevant time scales would be beneficial to evaluate the possible applications.

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  • ZrTe is a potential topological insulator (TI), yet its topological phase and relationship to its Dirac semimetallic state remain debated in the scientific community.
  • Researchers used a semiclassical multicarrier transport (MCT) model to study the magnetotransport of ZrTe nanodevices under high pressure, up to 2 GPa, revealing important temperature-dependent behavior.
  • Their findings support the idea that the band gap closes and reopens with increasing pressure, indicating a phase transition from weak to strong TI, which aligns with both theoretical calculations and previous studies indicating ZrTe behaves as a weak TI under normal conditions.
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  • Graphene has become a key material for electron optical experiments, showing advantages over traditional two-dimensional electron gases, such as high mobility and precise electrostatic control for creating gap-less p-n interfaces.
  • These interfaces can host unique particle states and are crucial for building complex electron devices like interferometers, leveraging features like the Dirac spectrum and Berry phase.
  • The review covers the theoretical foundations, fabrication methods, and simulation techniques for graphene electron optics, along with analysis of ballistic transport experiments and current advancements in devices like Mach-Zender and Fabry-Perot interferometers.
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Bilayer graphene (BLG) was recently shown to host a band-inverted phase with unconventional topology emerging from the Ising-type spin-orbit interaction (SOI) induced by the proximity of transition metal dichalcogenides with large intrinsic SOI. Here, we report the stabilization of this band-inverted phase in BLG symmetrically encapsulated in tungsten diselenide (WSe) via hydrostatic pressure. Our observations from low temperature transport measurements are consistent with a single particle model with induced Ising SOI of opposite sign on the two graphene layers.

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Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is controversial, and various mechanisms have been proposed to explain it. In this work, we have investigated the GCS in a Ta layer deposited on the surface of InAs nanowires.

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