Crescent Antennas as Sensors: Case of Sensing Brain Pathology.

Microstrip crescent antennas offer compactness, conformability, low profile, high sensitivity, multi-band operability, cost-effectiveness and ease of fabrication in contrast to bulky, rigid horn, helical and Vivaldi antennas. This work presents crescent sensors for monitoring brain pathology associated with stroke and atrophy. Single- and multi-element crescent sensors are designed and validated by software simulations.

A Closed Cavity Ultrasonic Resonator Formed by Graphene/PMMA Membrane for Acoustic Application.

A graphene/poly(methyl methacrylate) (PMMA) closed cavity resonator with a resonant frequency at around 160 kHz has been fabricated. A six-layer graphene structure with a 450 nm PMMA laminated layer has been dry-transferred onto the closed cavity with an air gap of 105 μm. The resonator has been actuated in an atmosphere and at room temperature by mechanical, electrostatic and electro-thermal methods.

Evaluating the use of the ABCD2 score as a clinical decision aid in the emergency department: Retrospective observational study.

Objective: Clinical decision aids (CDAs) can help clinicians with patient risk assessment. However, there is little data on CDA calculation, interpretation and documentation in real-world ED settings. The ABCD2 score (range 0-7) is a CDA used for patients with transient ischaemic attack (TIA) and assesses risk of stroke, with a score of 0-3 being low risk.

Design and Evaluation of Wearable Multimodal RF Sensing System for Vascular Dementia Detection.

Vascular dementia is the second most common form of dementia and a leading cause of death. Brain stroke and brain atrophy are the major degenerative pathologies associated with vascular dementia. Timely detection of these progressive pathologies is critical to avoid brain damage.

Mixed Dimensional ZnO/WSe Piezo-gated Transistor with Active Millinewton Force Sensing.

This work demonstrates a mixed-dimensional piezoelectric-gated transistor in the microscale that could be used as a millinewton force sensor. The force-sensing transistor consists of 1D piezoelectric zinc oxide (ZnO) nanorods (NRs) as the gate control and multilayer tungsten diselenide (WSe) as the transistor channel. The applied mechanical force on piezoelectric NRs can induce a drain-source current change (Δ) on the WSe channel.