A computationally efficient discrete pseudomodulation algorithm for real-time magnetic resonance measurements.

Rapid-scan electron paramagnetic resonance (RSEPR) results in a significant improvement in signal-to-noise over magnetic field modulated continuous wave EPR (CWEPR). However, the RSEPR raw absorption spectra can make the real-time comparison of CWEPR spectra difficult, especially in systems where the total number of paramagnetic spins is low. In this paper, we illustrate a method of applying pseudomodulation within RSEPR data collection software in real-time.

An improved adaptive signal averaging technique for noise reduction and tracking enhancements in continuous wave magnetic resonance.

We have significantly refined an adaptive signal averaging approach developed primarily for continuous wave electron paramagnetic resonance and electrically detected magnetic resonance measurements. This refinement overcomes several limitations and greatly simplifies the earlier approach. The new technique provides a large improvement in tracking and numerical stability and also features fewer adjustable parameters making this approach more user intuitive.

Apparatus for electrically detected electron nuclear double resonance in solid state electronic devices.

We have developed a sensitive electron nuclear double resonance spectrometer in which the detection takes place through electrically detected magnetic resonance. We demonstrate that the spectrometer can provide reasonably high signal to noise spectra of N interactions with deep level centers in a fully processed bipolar junction transistor at room temperature.

Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station.

We report on a novel electron paramagnetic resonance (EPR) technique that merges electrically detected magnetic resonance (EDMR) with a conventional semiconductor wafer probing station. This union, which we refer to as wafer-level EDMR (WL-EDMR), allows EDMR measurements to be performed on an unaltered, fully processed semiconductor wafer. Our measurements replace the conventional EPR microwave cavity or resonator with a very small non-resonant near-field microwave probe.

Total Ionizing Dose Effects on TiN/Ti/HfO/TiN Resistive Random-Access Memory Studied via Electrically Detected Magnetic Resonance.

We observe a gamma-irradiation induced change in electrically detected magnetic resonance (EDMR) in TiN/Ti/HfO/TiN resistive random access memory (RRAM). EDMR measurements exclusively detect electrically active defects which are directly involved in the transport mechanisms within these devices. The EDMR response has an isotropic g-value of 2.