Publications by authors named "P K J Singaravelu"

Article Synopsis
  • The study investigates the therapeutic properties of rose flowers (Rosa chinensis) through pharmacological testing, confirming traditional uses with scientific evidence.
  • Various methods, including DNA isolation, antibacterial assays, and anticancer evaluations, were used to analyze the rose extract's effects, highlighting its potent antimicrobial activity against drug-resistant bacteria and its impact on lung cancer cells.
  • The findings suggest that the rose extract contains several active compounds responsible for its therapeutic benefits, showing promise as a potential antimicrobial drug and anticancer agent.
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The mechanisms regulating the disassembly of branched actin networks formed by the Arp2/3 complex still remain to be fully elucidated. In addition, the impact of Arp3 isoforms on the properties of Arp2/3 are also unexplored. We now demonstrate that Arp3 and Arp3B isocomplexes promote actin assembly equally efficiently but generate branched actin networks with different disassembly rates.

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A novel configuration of a Fourier domain mode locked (FDML) laser based on silicon photonics platform is presented in this work that exploits the narrowband reflection spectrum of a photonic crystal (PhC) cavity resonator. Configured as a linear Fabry-Perot laser, forward biasing of a p-n junction on the PhC cavity allowed for thermal tuning of the spectrum. The modulation frequency applied to the reflector equalled the inverse roundtrip time of the long cavity resulting in stable FDML operation over the swept wavelength range.

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We demonstrate frequency modulation (FM) in an external cavity (EC) III-V/silicon laser, comprising a reflective semiconductor optical amplifier (RSOA) and a silicon nitride (SiN) waveguide vertically coupled to a 2D silicon photonic crystal (PhC) cavity. The PhC cavity acts as a tunable narrowband reflector giving wavelength selectivity. The FM was achieved by thermo-optical modulation of the reflector via a p-n junction.

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In this paper, we show the experimental results of a thermally stable SiN external cavity (SiN EC) laser with high power output and the lowest SiN EC laser threshold to our knowledge. The device consists of a 250 μm sized reflective semiconductor optical amplifier butt-coupled to a passive chip based on a series of SiN Bragg gratings acting as narrow reflectors. A threshold of 12 mA has been achieved, with a typical side-mode suppression ratio of 45 dB and measured power output higher than 3 mW.

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