Moiré band structure engineering using a twisted boron nitride substrate.

Applying long wavelength periodic potentials on quantum materials has recently been demonstrated to be a promising pathway for engineering novel quantum phases of matter. Here, we utilize twisted bilayer boron nitride (BN) as a moiré substrate for band structure engineering. Small-angle-twisted bilayer BN is endowed with periodically arranged up and down polar domains, which imprints a periodic electrostatic potential on a target two-dimensional (2D) material placed on top.

On-chip multi-degree-of-freedom control of two-dimensional materials.

Two-dimensional materials (2DM) and their heterostructures offer tunable electrical and optical properties, primarily modifiable through electrostatic gating and twisting. Although electrostatic gating is a well-established method for manipulating 2DM, achieving real-time control over interfacial properties remains challenging in exploring 2DM physics and advanced quantum device technology. Current methods, often reliant on scanning microscopes, are limited in their scope of application, lacking the accessibility and scalability of electrostatic gating at the device level.

Ultrafast high-endurance memory based on sliding ferroelectrics.

The persistence of voltage-switchable collective electronic phenomena down to the atomic scale has extensive implications for area- and energy-efficient electronics, especially in emerging nonvolatile memory technology. We investigate the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a different form of atomically thin two-dimensional (2D) ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion.

Moiré synaptic transistor with room-temperature neuromorphic functionality.

Moiré quantum materials host exotic electronic phenomena through enhanced internal Coulomb interactions in twisted two-dimensional heterostructures. When combined with the exceptionally high electrostatic control in atomically thin materials, moiré heterostructures have the potential to enable next-generation electronic devices with unprecedented functionality. However, despite extensive exploration, moiré electronic phenomena have thus far been limited to impractically low cryogenic temperatures, thus precluding real-world applications of moiré quantum materials.