Kinetic Monte Carlo simulations of Ge-Sb-Te thin film crystallization.

Simulation of atomic redistribution in Ge-Sb-Te (GST)-based memory cells during SET/RESET cycling is needed in order to understand GST memory cell failure and to design improved non-volatile memories. However, this type of atomic scale simulations is extremely challenging. In this work, we propose to use a simplified GST system in order to catch the basics of atomic redistribution in Ge-rich GST (GrGST) films using atomistic kinetic Monte Carlo simulations.

Role of dislocation elastic field on impurity segregation in Fe-based alloys.

Dislocation engineering in crystalline materials is essential when designing materials for a large range of applications. Segregation of additional elements at dislocations is frequently used to modify the influence of dislocations on material properties. Thus, the influence of the dislocation elastic field on impurity segregation is of major interest, as its understanding should lead to engineering solutions that improve the material properties.