Rhenium ion beam for implantation into semiconductors.

At the ion source test bench in Institute for Theoretical and Experimental Physics the program of ion source development for semiconductor industry is in progress. In framework of the program the Metal Vapor Vacuum Arc ion source for germanium and rhenium ion beam generation was developed and investigated. It was shown that at special conditions of ion beam implantation it is possible to fabricate not only homogenous layers of rhenium silicides solid solutions but also clusters of this compound with properties of quantum dots.

ITEP MEVVA ion beam for rhenium silicide production.

The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis.

Portable emittance measurement device.

In Institute for Theoretical and Experimental Physics (ITEP) the portable emittance measurements device is developed. It provides emittance measurements both with "pepper-pot" and "two slits" methods. Depending on the method of measurements, either slits or pepper-pot mask with scintillator are mounted on the two activators and are installed in two standard Balzer's cross chamber with CF-100 flanges.