Ultrasound-Assisted Synthesis of SnS Quantum Dots Using Acetone as Solvent.

A sonochemical synthesis of SnS quantum dots using acetone as a solvent is investigated. Two different tin sources (SnCl∙2HO or SnCl∙5HO) as well as two different sulfur sources (thioacetamide or NaSO) were applied. The sonication time was also varied between 60 and 120 min.

Sonochemical synthesis of SnS and SnS quantum dots from aqueous solutions, and their photo- and sonocatalytic activity.

Our study reports the ultrasound-assisted synthesis of SnS and SnS in the form of nanoparticles using aqueous solutions of respective tin chloride and thioacetamide varying sonication time. The presence of both compounds is confirmed by powder X-ray diffraction, energy-dispersive X-ray spectroscopy, as well as Raman and FT-IR spectroscopic techniques. The existence of nanoparticles is proven by powder X-ray diffraction investigation and by high resolution transmission electron microscopy observations.

Atomic Layer Deposition of HfO Films Using TDMAH and Water or Ammonia Water.

Atomic layer deposition of HfO from TDMAH and water or ammonia water at different temperatures below 400 °C is studied. Growth per cycle (GPC) has been recorded in the range of 1.2-1.

Phase-transition critical thickness of rocksalt MgZnO layers.

The rocksalt structure of ZnO has a very promising bandgap for optoelectronic applications. Unfortunately, this high-pressure phase is unstable under ambient conditions. This paper presents experimental results for rocksalt-type ZnO/MgO superlattices and theoretical considerations of the critical thickness of MgZnO layers.

Structural Quality and Magnetotransport Properties of Epitaxial Layers of the (Ga,Mn)(Bi,As) Dilute Magnetic Semiconductor.

Structural analysis of epitaxial layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor (DMS), together with investigations of their magnetotransport properties, has been thoroughly performed. The obtained results are compared with those for the reference (Ga,Mn)As layers, grown under similar conditions, with the aim to reveal an impact of Bi incorporation on the properties of this DMS material. Incorporation of Bi into GaAs strongly enhances the spin-orbit coupling strength in this semiconductor, and the same has been expected for the (Ga,Mn)(Bi,As) alloy.