The continuous displacement field within elastically relaxed GaInAs islands was calculated from digitized HREM images of [110] cross sections of In0.35Ga0.65As layers grown on GaAs by molecular beam epitaxy.
View Article and Find Full Text PDFN,N,N-butylethylpentylpropylammonium iodide 4 and related molecules have been selectively synthesised from commercially available aldehydes, amines and alkyl iodides using a reductive alkylation procedure. The crystalline texture of 4 obtained on cooling is optically isotropic between crossed polarisers, indicating a cubic structure. Differential scanning calorimetry (DSC, +10 K min-1) reveals a glass phase transition at -59 degrees C and a melting point at 192 degrees C.
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