The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO/SiO Double-Layer.

We report on a procedure for extracting the SPICE model parameters of a RADFET sensor with a dielectric HfO/SiO double-layer. RADFETs, traditionally fabricated as PMOS transistors with SiO, are enhanced by incorporating high-k dielectric materials such as HfO to reduce oxide thickness in modern radiation sensors. The fabrication steps of the sensor are outlined, and model parameters, including the threshold voltage and transconductance, are extracted based on experimental data.

An emission based optical CO sensor fabricated on grating-like TiO substrates using HPTS.

TiO is a widely used material in various applications, including photo-catalysis, sensing, and dye-sensitized solar cells. In this work, we presented a stable and sensitive CO sensor working on principle of emission signals of the HPTS dye immobilized on TiO substrates whose effectiverefractive indicesin the parallel and perpendicular grating orientations evidenced earlier. The HPTS exhibited 8.