Publications by authors named "Owen J Hildreth"

Advances in selective laser melting (SLM) of metals in the past two decades have made metals additive manufacturing more accessible for industrial adoption. Despite printing process improvements, post-processing of SLM components has not improved much, resulting in considerable costs, delay, and design limitations. Building upon recent advances in sensitization-based self-terminating etching processes, this work details a new set iodine-based sensitization and etching chemistries that simplify the post-processing of copper (Cu) alloy components fabricated using SLM.

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Transparent conducting electrodes (TCEs) are essential components in devices such as touch screens, smart windows, and photovoltaics. Metal nanowire networks are promising next-generation TCEs, but best-performing examples rely on expensive metal catalysts (palladium or platinum), vacuum processing, or transfer processes that cannot be scaled. This work demonstrates a metal nanowire TCE fabrication process that focuses on high performance and simple fabrication.

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Stretchable electronics have important applications in health monitoring and integrated lab-on-a-chip devices. This paper discusses the performance of serpentine stretchable interconnects printed using self-reducing, silver reactive inks. It details process optimization, device fabrication, and device characterization, while demonstrating the potential applications for reactive inks and new design strategies in stretchable electronics.

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Room temperature liquid-metal microfluidic devices are attractive systems for hyperelastic strain sensing. These liquid-phase electronics are intrinsically soft and retain their functionality even when stretched to several times their original length. Currently two types of liquid metal-based strain sensors exist for in-plane measurements: single-microchannel resistive and two-microchannel capacitive devices.

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Metal-assisted Chemical Etching of silicon has recently emerged as a powerful technique to fabricate 1D, 2D, and 3D nanostructures in silicon with high feature fidelity. This work demonstrates that out-of-plane rotational catalysts utilizing polymer pinning structures can be designed with excellent control over rotation angle. A plastic deformation model was developed establishing that the catalyst is driven into the silicon substrate with a minimum pressure differential across the catalyst thickness of 0.

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The ability to fabricate 3D spiraling structures using metal-assisted chemical etching (MaCE) is one of the unique advantages of MaCE over traditional etching methods. However, control over the chirality of the spiraling structures has not been established. In this work, a systematic parametric study was undertaken for MaCE of star-shaped catalysts, examining the influence of arm shape, arm length, number of arms, center core diameter, and catalyst thickness on the rotation direction.

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In recent years metal-assisted chemical etching (MaCE) of silicon, in which etching is confined to a small region surrounding metal catalyst templates, has emerged as a promising low cost alternative to commonly used three-dimensional (3D) fabrication techniques. We report a new methodology for controllable folding of 2D metal catalyst films into 3D structures using MaCE. This method takes advantage of selective patterning of the catalyst layer into regions with mismatched characteristic dimensions, resulting in uneven etching rates along the notched boundary lines that produce hinged 2D templates for 3D folding.

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A process that allows control over the 3D motion of catalyst nanostructures during metal-assisted chemical etching by their local pinning prior to etching is demonstrated. The pinning material acts as a fulcrum for rotation of the catalyst structures resulting in etching of silicon features with rotational geometry.

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In this work, we introduce a maskless, resist-free rapid prototyping method to fabricate three-dimensional structures using electron beam induced deposition (EBID) of amorphous carbon (aC) from a residual hydrocarbon precursor in combination with metal-assisted chemical etching (MaCE) of silicon. We demonstrate that EBID-made patterned aC coating, with thickness of even a few nanometers, acts as a negative "mask" for the etching process and is sufficient for localized termination of the MaCE of silicon. Optimal aC deposition settings and gold film thickness for fabrication of high-aspect-ratio nanoscale 3D silicon structures are determined.

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Metal-assisted chemical etching (MaCE) of silicon in conjunction with shaped catalysts was used to fabricate 3D nanostructures such as sloping channels, cycloids, and spirals along with traditional vertical channels. The investigation used silver nanorods, nanodonuts along with electron beam lithography (EBL)-patterned gold nanodiscs, nanolines, squares, grids, and star-shaped catalysts to show how catalyst shape and line width directly influence etching direction. Feature sizes ranging from micrometers down to 25 nm were achieved with aspect ratios of at least 10:1 and wall roughness of 10 nm or less.

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