Thermal Conductivity in Biphasic Silicon Nanowires.

The work unravels the previously unexplored atomic-scale mechanism involving the interaction of phonons with crystal homointerfaces. Silicon nanowires with engineered isotopic content and crystal phases were chosen for this investigation. Crystal polytypism, manifested by the presence of both diamond cubic and rhombohedral phases within the same nanowire, provided a testbed to study the impact of phase homointerfaces on phonon transport.

Stemless InSb nanowire networks and nanoflakes grown on InP.

Among the experimental realization of fault-tolerant topological circuits are interconnecting nanowires with minimal disorder. Out-of-plane indium antimonide (InSb) nanowire networks formed by merging are potential candidates. Yet, their growth requires a foreign material stem usually made of InP-InAs.

Mid-infrared Imaging Using Strain-Relaxed GeSn Alloys Grown on 20 nm Ge Nanowires.

Germanium-tin (GeSn) semiconductors are a front-runner platform for compact mid-infrared devices due to their tunable narrow bandgap and compatibility with silicon processing. However, their large lattice parameter has been a major hurdle, limiting the quality of epitaxial layers grown on silicon or germanium substrates. Herein, we demonstrate that 20 nm Ge nanowires (NWs) act as effective compliant substrates to grow extended defect-free GeSn alloys with a composition uniformity over several micrometers along the NW growth axis without significant buildup of the compressive strain.

Nuclear Spin-Depleted, Isotopically Enriched Ge/ Si Ge Quantum Wells.

The p-symmetry of the hole wavefunction is associated with a weaker hyperfine interaction, which makes hole spin qubits attractive candidates to implement quantum processors. However, recent studies demonstrate that hole qubits are still very sensitive to nuclear spin bath, thus highlighting the need for nuclear spin-free germanium (Ge) qubits to suppress this decoherence channel. Herein, this work demonstrates the epitaxial growth of Ge- and Si-depleted, isotopically enriched Ge/silicon-germanium (SiGe) quantum wells.

Short-wave infrared cavity resonances in a single GeSn nanowire.

Nanowires are promising platforms for realizing ultra-compact light sources for photonic integrated circuits. In contrast to impressive progress on light confinement and stimulated emission in III-V and II-VI semiconductor nanowires, there has been no experimental demonstration showing the potential to achieve strong cavity effects in a bottom-up grown single group-IV nanowire, which is a prerequisite for realizing silicon-compatible infrared nanolasers. Herein, we address this limitation and present an experimental observation of cavity-enhanced strong photoluminescence from a single Ge/GeSn core/shell nanowire.

Polarization-Tuned Fano Resonances in All-Dielectric Short-Wave Infrared Metasurface.

The short-wave infrared (SWIR) is an underexploited portion of the electromagnetic spectrum in metasurface-based nanophotonics despite its strategic importance in sensing and imaging applications. This is mainly attributed to the lack of material systems to tailor light-matter interactions in this range. Herein, this limitation is addressed and an all-dielectric silicon-integrated metasurface enabling polarization-induced Fano resonance control at SWIR frequencies is demonstrated.

Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots.

Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processors. Here, we elucidate and statistically predict the valley splitting by the holistic integration of 3D atomic-level properties, theory and transport.

Electronic Signature of Subnanometer Interfacial Broadening in Heterostructures.

Interfaces are ubiquitous in semiconductor low-dimensional systems used in electronics, photonics, and quantum computing. Understanding their atomic-level properties has thus been crucial to controlling the basic behavior of heterostructures and optimizing the device performance. Herein, we demonstrate that subnanometer interfacial broadening in heterostructures induces localized energy states.

A Light-Hole Germanium Quantum Well on Silicon.

The quiet quantum environment of holes in solid-state devices is at the core of increasingly reliable architectures for quantum processors and memories. However, due to the lack of scalable materials to properly tailor the valence band character and its energy offsets, the precise engineering of light-hole (LH) states remains a serious obstacle toward coherent optical photon-spin interfaces needed for a direct mapping of the quantum information encoded in photon flying qubits to stationary spin processors. Herein, to alleviate this long-standing limitation, an all-group-IV low-dimensional system is demonstrated, consisting of a highly tensile strained germanium quantum well grown on silicon allowing new degrees of freedom to control and manipulate the hole states.

Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires.

Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, that is, strong spin-orbit interaction and large Landé g-factor. Integrating InSb nanowires with other materials could potentially unfold novel devices with distinctive functionality. A prominent example is the combination of InSb nanowires with superconductors for the emerging topological particles research.

Atomic Pathways of Solute Segregation in the Vicinity of Nanoscale Defects.

Using GeSn semiconductor as a model system, this work unravels the atomic-level details of the behavior of solutes in the vicinity of a dislocation prior to surface segregation in strained, metastable thin layers. The dislocations appear in the 3D atom probe tomography maps as columnar regions, 3.5-4.

Pnictogens Allotropy and Phase Transformation during van der Waals Growth.

With their ns2 np3 valence electronic configuration, pnictogens are the only system to crystallize in layered van der Waals (vdW) and quasi-vdW structures throughout the group. Light pnictogens crystallize in the A17 phase, and bulk heavier elements prefer the A7 phase. Herein, we demonstrate that the A17 of heavy pnictogens can be stabilized in antimonene grown on weakly interacting surfaces and that it undergoes a spontaneous thickness-driven transformation to the stable A7 phase.

2D Antimony-Arsenic Alloys.

Alloying in group V 2D materials and heterostructures is an effective degree of freedom to tailor and enhance their physical properties. Up to date, black arsenic-phosphorus is the only 2D group V alloy that has been experimentally achieved by exfoliation, leaving all other possible alloys in the realm of theoretical predictions. Herein, the existence of an additional alloy consisting of 2D antimony arsenide (2D-As Sb ) grown by molecular beam epitaxy on group IV semiconductor substrates and graphene is demonstrated.

3D Atomic Mapping of Interfacial Roughness and Its Spatial Correlation Length in Sub-10 nm Superlattices.

The interfacial abruptness and uniformity in heterostructures are critical to control their electronic and optical properties. With this perspective, this work demonstrates the three-dimensional (3D) atomic-level mapping of the roughness and uniformity of buried epitaxial interfaces in Si/SiGe superlattices with a layer thickness in the 1.5-7.

Dynamics of Antimonene-Graphene Van Der Waals Growth.

Van der Waals (vdW) heterostructures have recently been introduced as versatile building blocks for a variety of novel nanoscale and quantum technologies. Harnessing the unique properties of these heterostructures requires a deep understanding of the involved interfacial interactions and a meticulous control of the growth of 2D materials on weakly interacting surfaces. Although several epitaxial vdW heterostructures have been achieved experimentally, the mechanisms governing their synthesis are still nebulous.

Alignment of semiconducting graphene nanoribbons on vicinal Ge(001).

Chemical vapor deposition of CH4 on Ge(001) can enable anisotropic growth of narrow, semiconducting graphene nanoribbons with predominately smooth armchair edges and high-performance charge transport properties. However, such nanoribbons are not aligned in one direction but instead grow perpendicularly, which is not optimal for integration into high-performance electronics. Here, it is demonstrated that vicinal Ge(001) substrates can be used to synthesize armchair nanoribbons, of which ∼90% are aligned within ±1.

Highly tensile-strained Ge/InAlAs nanocomposites.

Self-assembled nanocomposites have been extensively investigated due to the novel properties that can emerge when multiple material phases are combined. Growth of epitaxial nanocomposites using lattice-mismatched constituents also enables strain-engineering, which can be used to further enhance material properties. Here, we report self-assembled growth of highly tensile-strained Ge/InAlAs (InAlAs) nanocomposites by using spontaneous phase separation.

Dynamics and Mechanisms of Exfoliated Black Phosphorus Sublimation.

We report on real time observations of the sublimation of exfoliated black phosphorus layers throughout annealing using in situ low energy electron microscopy. We found that sublimation manifests itself above 375 ± 20 °C through the nucleation and expansion of asymmetric, faceted holes with the long axis aligned along the [100] direction and sharp tips defined by edges consisting of alternating (10) and (11) steps. This thermally activated process repeats itself via successive sublimation of individual layers.

Laser-Assisted Field Evaporation and Three-Dimensional Atom-by-Atom Mapping of Diamond Isotopic Homojunctions.

It addition to its high evaporation field, diamond is also known for its limited photoabsorption, strong covalent bonding, and wide bandgap. These characteristics have been thought for long to also complicate the field evaporation of diamond and make its control hardly achievable on the atomistic-level. Herein, we demonstrate that the unique behavior of nanoscale diamond and its interaction with pulsed laser lead to a controlled field evaporation thus enabling three-dimensional atom-by-atom mapping of diamond (12)C/(13)C homojunctions.

In situ Raman spectroscopic study of Al-infiltrated spider dragline silk under tensile deformation.

Natural materials consisting of protein structures impregnated with a tiny amount of metals often exhibit impressive mechanical behavior, which represents a new design paradigm for the development of biomimetic materials. Here, we produced Al-infiltrated silks by applying a modified Al2O3 atomic layer deposition process to the dragline silk of the Nephila pilipes spider, which showed unusual mechanical properties. The deformation behavior of the molecular structure of the Al-infiltrated silk was investigated by performing in situ Raman spectroscopy, where Raman shifts were measured concurrently with macroscopic mechanical deformations.

Coherent X-ray diffraction imaging and characterization of strain in silicon-on-insulator nanostructures.

Coherent X-ray diffraction imaging (CDI) has emerged in the last decade as a promising high resolution lens-less imaging approach for the characterization of various samples. It has made significant technical progress through developments in source, algorithm and imaging methodologies thus enabling important scientific breakthroughs in a broad range of disciplines. In this report, we will introduce the principles of forward scattering CDI and Bragg geometry CDI (BCDI), with an emphasis on the latter.

Direct optical mapping of anisotropic stresses in nanowires using transverse optical phonon splitting.

Strain engineering is ubiquitous in the design and fabrication of innovative, high-performance electronic, optoelectronic, and photovoltaic devices. The increasing importance of strain-engineered nanoscale materials has raised significant challenges at both fabrication and characterization levels. Raman scattering spectroscopy (RSS) is one of the most straightforward techniques that have been broadly utilized to estimate the strain in semiconductors.