CdS/CdTe Heterostructures for Applications in Ultra-Thin Solar Cells.

The preparation of ultra-thin semi-transparent solar cells with potential applications in windows or transparent roofs entails several challenges due to the very small thickness of the layers involved. In particular, problems related to undesired inter-diffusion or inhomogeneities originated by incomplete coverage of the growing surfaces must be prevented. In this paper, undoped SnO₂, CdS, and CdTe thin films with thickness suitable for use in ultra-thin solar cells were deposited with a radiofrequency (RF) magnetron sputtering technique onto conductive glass.

Controlling the Epitaxial Growth of BiTe, BiTe, and BiTe Pure Phases by Physical Vapor Transport.

BiTe is a well-studied material because of its thermoelectric properties and, recently, has also been studied as a topological insulator. However, it is only one of several compounds in the Bi-Te system. This work presents a study of the physical vapor transport growth of Bi-Te material focused on determining the growth conditions required to selectively obtain a desired phase of the Bi-Te system, i.

Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport.

Photoluminescence (PL) studies in GaN thin films grown by infrared close space vapor transport (CSVT-IR) in vacuum are presented in this work. The growth of GaN thin films was done on a variety of substrates like silicon, sapphire and fused silica. Room temperature PL spectra of all the GaN films show near band-edge emission (NBE) and a broad blue and green luminescence (BL, GL), which can be seen with the naked eye in a bright room.

Isothermal close space sublimation for II-VI semiconductor filling of porous matrices.

Isothermal close space sublimation, a simple and low-cost physical vapour transport technique, was used to infiltrate ZnTe and CdSe semiconductors in porous silicon. The structure of the embedded materials was determined by X-ray diffraction analysis while Rutherford backscattering spectra allowed determining the composition profiles of the samples. In both cases, a constant composition of the II-VI semiconductors throughout the porous layer down to the substrate was found.