Publications by authors named "Osamu Oda"

Using our recently developed radical-enhanced metalorganic chemical vapor deposition (REMOCVD) technique, we have grown gallium nitride (GaN) on bulk GaN and GaN on Si templates. Three features make up this system: (1) applying very high-frequency power (60 MHz) to increase the plasma density; (2) introducing H and N gas in the plasma discharge region to produce active NH radical species in addition to nitrogen radicals; and (3) supplying radicals under remote plasma arrangement with a Faraday cage to suppress charged ions and photons. Using this new REMOCVD system, it was found that high-quality crystals can be grown at lower temperatures than that of MOCVD but the disadvantage was that the growth rate was smaller as 0.

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The growth of sputtered GaN at low temperature is strongly desired to realize the dissemination of low-cost GaN high electron mobility transistor devices for next-generation communication technology. In this work, the roles of atomic nitrogen (N)/hydrogen (H) in GaN film growth on AlN/sapphire substrates by chemically assisted dual source sputtering are studied at a low growth temperature of 600 °C under a pressure of 2 Pa using vacuum ultraviolet absorption spectroscopy. The lateral growth was strongly enhanced with an appropriate H/N flux ratio of 1.

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Background: A dextran sulfate column (Liposorber) has been developed and proven effective in LDL apheresis for removing LDL from patients with hyperlipemia. Chronic renal failure (CRF) patients with arteriosclerosis obliterans (ASO) treated with Liposorber have been shown good results.

Methods: We analyzed proteins absorbed by Liposorber in CRF patients with ASO by means of 2-dimensional electrophoresis and found some noteworthy protein spots.

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