Enhanced non-classical electrostriction in strained tetragonal ceria.

Electrostriction is the upsurge of strain under an electric field in any dielectric material. Oxygen-defective metal oxides, such as acceptor-doped ceria, exhibit high electrostriction 10 mV values, which can be further enhanced via interface engineering at the nanoscale. This effect in ceria is "non-classical" as it arises from an intricate relation between defect-induced polarisation and local elastic distortion in the lattice.

Effects of In-Air Post Deposition Annealing Process on the Oxygen Vacancy Content in Sputtered GDC Thin Films Probed via Operando XAS and Raman Spectroscopy.

We investigate the ionic mobility in room-temperature RF-sputtered gadolinium doped ceria (GDC) thin films grown on industrial solid oxide fuel cell substrates as a function of the air-annealing at 800 and 1000 °C. The combination of X-ray diffraction, X-ray photoelectron spectroscopy, operando X-ray absorption spectroscopy, and Raman spectroscopy allows us to study the different Ce/ Ce ratios induced by the post growth annealing procedure, together with the Ce valence changes induced by different gas atmosphere exposure. Our results give evidence of different kinetics as a function of the annealing temperature, with the sample annealed at 800 °C showing marked changes of the Ce oxidation state when exposed to both reducing and oxidizing gas atmospheres at moderate temperature (300 °C), while the Ce valence is weakly affected for the 1000 °C annealed sample.

Uncovering the Lowest Thickness Limit for Room-Temperature Ferromagnetism of CrTe.

Metallic ferromagnetic transition metal dichalcogenides have emerged as important building blocks for scalable magnetic and memory applications. Downscaling such systems to the ultrathin limit is critical to integrate them into technology. Here, we achieved layer-by-layer control over the transition metal dichalcogenide CrTe by using pulsed laser deposition, and we uncovered the minimum critical thickness above which room-temperature magnetic order is maintained.

On the origin of the improved hydrogen evolution reaction in Mn- and Co-doped MoS.

In the field of hydrogen production, MoS demonstrates good catalytic properties for the hydrogen evolution reaction (HER) which improve when doped with metal cations. However, while the role of sulfur atoms as active sites in the HER is largely reported, the role of metal atoms ( molybdenum or the dopant cations) has yet to be studied in depth. To understand the role of the metal dopant, we study MoS thin films doped with Co and Mn ions.

Signatures of a surface spin-orbital chiral metal.

The relation between crystal symmetries, electron correlations and electronic structure steers the formation of a large array of unconventional phases of matter, including magneto-electric loop currents and chiral magnetism. The detection of such hidden orders is an important goal in condensed-matter physics. However, until now, non-standard forms of magnetism with chiral electronic ordering have been difficult to detect experimentally.

Observation of Termination-Dependent Topological Connectivity in a Magnetic Weyl Kagome Lattice.

Engineering surfaces and interfaces of materials promises great potential in the field of heterostructures and quantum matter designers, with the opportunity to drive new many-body phases that are absent in the bulk compounds. Here, we focus on the magnetic Weyl kagome system CoSnS and show how for the terminations of different samples the Weyl points connect differently, still preserving the bulk-boundary correspondence. Scanning tunneling microscopy has suggested such a scenario indirectly, and here, we probe the Fermiology of CoSnS directly, by linking it to its real space surface distribution.

Unveiling the Electronic Structure of Pseudotetragonal WO Thin Films.

WO is a 5d compound that undergoes several structural transitions in its bulk form. Its versatility is well-documented, with a wide range of applications, such as flexopiezoelectricity, electrochromism, gating-induced phase transitions, and its ability to improve the performance of Li-based batteries. The synthesis of WO thin films holds promise in stabilizing electronic phases for practical applications.

Dual pulsed laser deposition system for the growth of complex materials and heterostructures.

Here, we present an integrated ultra-high-vacuum (UHV) apparatus for the growth of complex materials and heterostructures. The specific growth technique is the Pulsed Laser Deposition (PLD) by means of a dual-laser source based on an excimer KrF ultraviolet and solid-state Nd:YAG infra-red lasers. By taking advantage of the two laser sources-both lasers can be independently used within the deposition chambers-a large number of different materials-ranging from oxides to metals, to selenides, and others-can be successfully grown in the form of thin films and heterostructures.

Ion-Induced Lateral Damage in the Focused Ion Beam Patterning of Topological Insulator BiSe Thin Films.

Focused Ion Beam patterning has become a widely applied technique in the last few decades in the micro- and nanofabrication of quantum materials, representing an important advantage in terms of resolution and versatility. However, ion irradiation can trigger undesired effects on the target material, most of them related to the damage created by the impinging ions that can severely affect the crystallinity of the sample, compromising the application of Focused Ion Beam to the fabrication of micro- and nanosized systems. We focus here on the case of BiSe, a topological material whose unique properties rely on its crystallinity.

Nd:YAG infrared laser as a viable alternative to excimer laser: YBCO case study.

We report on the growth and characterization of epitaxial YBa[Formula: see text]Cu[Formula: see text]O[Formula: see text] (YBCO) complex oxide thin films and related heterostructures exclusively by Pulsed Laser Deposition (PLD) and using first harmonic Nd:Y[Formula: see text]Al[Formula: see text]O[Formula: see text] (Nd:YAG) pulsed laser source ([Formula: see text] = 1064  nm). High-quality epitaxial YBCO thin film heterostructures display superconducting properties with transition temperature [Formula: see text] 80 K. Compared with the excimer lasers, when using Nd:YAG lasers, the optimal growth conditions are achieved at a large target-to-substrate distance d.

Gapped Collective Charge Excitations and Interlayer Hopping in Cuprate Superconductors.

We use resonant inelastic x-ray scattering to probe the propagation of plasmons in the electron-doped cuprate superconductor Sr_{0.9}La_{0.1}CuO_{2}.

Disentangling Structural and Electronic Properties in VO Thin Films: A Genuine Nonsymmetry Breaking Mott Transition.

Phase transitions are key in determining and controlling the quantum properties of correlated materials. Here, by using the combination of material synthesis and photoelectron spectroscopy, we demonstrate a genuine Mott transition undressed of any symmetry breaking side effects in the thin films of VO. In particular and in contrast with the bulk VO, we unveil the purely electronic dynamics approaching the metal-insulator transition, disentangled from the structural transformation that is prevented by the residual substrate-induced strain.

Normal-State Transport Properties of Infinite-Layer SrLaCuO Electron-Doped Cuprates in Optimal- and Over-Doped Regimes.

Transport properties of electron-doped cuprate Sr1-xLaxCuO2 thin films have been investigated as a function of doping. In particular, optimal- and over-doped samples were obtained by tuning the Sr:La stoichiometric ratio. Optimal-doped samples show a non-Fermi liquid behavior characterized by linear dependence of the resistivity from room temperature down to intermediate temperature (about 150-170 K).

Electronic Properties of Fully Strained La Sr MnO Thin Films Grown by Molecular Beam Epitaxy (0.15 ≤ ≤ 0.45).

The structural, electronic, and magnetic properties of Sr-hole-doped epitaxial La Sr MnO (0.15 ≤ ≤ 0.45) thin films deposited using the molecular beam epitaxy technique on 4° vicinal STO (001) substrates are probed by the combination of X-ray diffraction and various synchrotron-based spectroscopy techniques.

Comparing Thickness and Doping-Induced Effects on the Normal States of Infinite-Layer Electron-Doped Cuprates: Is There Anything to Learn?

We grew SrLaCuO thin films and SrCuO/SrLaCuO/SrCuO trilayers by reflection high-energy diffraction-calibrated layer-by-layer molecular beam epitaxy, to study their electrical transport properties as a function of the doping and thickness of the central SrLaCuO layer. For the trilayer samples, as already observed in underdoped SLCO films, the electrical resistivity versus temperature curves as a function of the central layer thickness show, for thicknesses thinner than 20 unit cells, sudden upturns in the low temperature range with the possibility for identifying, in the normal state, the and a temperatures, respectively, separating high-temperature linear behavior and low-temperature quadratic dependence. By plotting the and values as a function of T for both the thin films and the trilayers, the data fall on the same curves.

Evidence of a 2D Electron Gas in a Single-Unit-Cell of Anatase TiO (001).

The formation and the evolution of electronic metallic states localized at the surface, commonly termed 2D electron gas (2DEG), represents a peculiar phenomenon occurring at the surface and interface of many transition metal oxides (TMO). Among TMO, titanium dioxide (TiO ), particularly in its anatase polymorph, stands as a prototypical system for the development of novel applications related to renewable energy, devices and sensors, where understanding the carrier dynamics is of utmost importance. In this study, angle-resolved photo-electron spectroscopy (ARPES) and X-ray absorption spectroscopy (XAS) are used, supported by density functional theory (DFT), to follow the formation and the evolution of the 2DEG in TiO thin films.

Evidence of Mn-Ion Structural Displacements Correlated with Oxygen Vacancies in LaSrMnO Interfacial Dead Layers.

The properties of half-metallic manganite thin films depend on the composition and structure in the atomic scale, and consequently, their potential functional behavior can only be based on fine structure characterization. By combining advanced transmission electron microscopy, electron energy loss spectroscopy, density functional theory calculations, and multislice image simulations, we obtained evidence of a 7 nm-thick interface layer in LaSrMnO (LSMO) thin films, compatible with the formation of well-known dead layers in manganites, with an elongated out-of-plane lattice parameter and structural and electronic properties well distinguished from the bulk of the film. We observed, for the first time, a structural shift of Mn ions coupled with oxygen vacancies and a reduced Mn valence state within such layer.

Omnipresence of Weak Antilocalization (WAL) in BiSe Thin Films: A Review on Its Origin.

Topological insulators are materials with time-reversal symmetric states of matter in which an insulating bulk is surrounded by protected Dirac-like edge or surface states. Among topological insulators, Bi2Se3 has attracted special attention due to its simple surface band structure and its relatively large band gap that should enhance the contribution of its surface to transport, which is usually masked by the appearance of defects. In order to avoid this difficulty, several features characteristic of topological insulators in the quantum regime, such as the weak-antilocalization effect, can be explored through magnetotransport experiments carried out on thin films of this material.

Spectroscopic Evidence of a Dimensionality-Induced Metal-to-Insulator Transition in the Ruddlesden-Popper LaNiO Series.

Perovskite-based heterostructures have recently gained remarkable interest, thanks to atomic-scale precision engineering. These systems are very susceptible to small variations of control parameters, such as two-dimensionality, strain, lattice polarizability, and doping. Focusing on the rare-earth nickelate diagram, LaNiO (LNO) catches the eye, being the only nickelate that does not undergo a metal-to-insulator transition (MIT).

Improved Structural Properties in Homogeneously Doped SmCeO Epitaxial Thin Films: High Doping Effect on the Electronic Bands.

The study of ionic materials on nanometer scale is of great relevance for efficient miniaturized devices for energy applications. The epitaxial growth of thin films can be a valid route to tune the properties of the materials and thus obtain new degrees of freedom in materials design. High crystal quality SmCeO films are here reported at a high doping level up to = 0.

Unveiling Oxygen Vacancy Superstructures in Reduced Anatase Thin Films.

Oxygen vacancies are known to play a crucial role in tuning the physical properties and technological applications of titanium dioxide TiO. Over the last decades, defects in substoichiometric TiO have been commonly associated with the formation of TiO Magnéli phases, which are extended planar defects originating from crystallographic shear planes. By combining advanced transmission electron microscopy techniques, electron energy-loss spectroscopy and atomistic simulations, we reach new understanding of the oxygen vacancy induced structural modulations in anatase, ruling out the earlier shear-plane model.

Low temperature hidden Fermi-liquid charge transport in under doped La Sr CuO infinite layer electron-doped thin films.

We have studied the low temperature electrical transport properties of La Sr CuO thin films grown by oxide molecular beam epitaxy on (1 1 0) GdScO and TbScO substrates. The transmission electron microscopy measurements and the x-ray diffraction analysis confirmed the epitaxy of the obtained films and the study of their normal state transport properties, removing the ambiguity regarding the truly conducting layer, allowed to highlight the presence of a robust hidden Fermi liquid charge transport in the low temperature properties of infinite layer electron doped cuprate superconductors. These results are in agreement with recent observations performed in other p  and n doped cuprate materials and point toward a general description of the superconducting and normal state properties in these compounds.

Nature of the metal-insulator transition in few-unit-cell-thick LaNiO films.

The nature of the metal-insulator transition in thin films and superlattices of LaNiO only a few unit cells in thickness remains elusive despite tremendous effort. Quantum confinement and epitaxial strain have been evoked as the mechanisms, although other factors such as growth-induced disorder, cation non-stoichiometry, oxygen vacancies, and substrate-film interface quality may also affect the observable properties of ultrathin films. Here we report results obtained for near-ideal LaNiO films with different thicknesses and terminations grown by atomic layer-by-layer laser molecular beam epitaxy on LaAlO substrates.

Fabrication of SrTiO₃ Layer on Pt Electrode for Label-Free Capacitive Biosensors.

Due to their interesting ferroelectric, conductive and dielectric properties, in recent years, perovskite-structured materials have begun to attract increasing interest in the biosensing field. In this study, a strontium titanate perovskite layer (SrTiO₃) has been synthesized on a platinum electrode and exploited for the development of an impedimetric label-free immunosensor for O157:H7 detection. The electrochemical characterization of the perovskite-modified electrode during the construction of the immunosensor, as well as after the interaction with different O157:H7 concentrations, showed a reproducible decrease of the total capacitance of the system that was used for the analytical characterization of the immunosensor.