Publications by authors named "Or Levit"
Article Synopsis
- The study highlights the advancements in ferroelectric doped HfO technology, which enables the development of fast, efficient nonvolatile memory and neuromorphic devices.
- Researchers have discovered that HfO-based FeFETs can be switched fully with a single subnanosecond pulse, showcasing their potential for rapid operation.
- The investigation into polarization switching speed reveals a strong time-voltage relationship that aligns with classical nucleation theory, helping to clarify the speed limits and kinetics of these devices.
Recently, nonvolatile resistive switching memory effects have been actively studied in two-dimensional (2D) transition metal dichalcogenides and boron nitrides to advance future memory and neuromorphic computing applications. Here, we report on radiofrequency (RF) switches utilizing hexagonal boron nitride (h-BN) memristors that afford operation in the millimeter-wave (mmWave) range. Notably, silver (Ag) electrodes to h-BN offer outstanding nonvolatile bipolar resistive switching characteristics with a high ON/OFF switching ratio of 10 and low switching voltage below 0.
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