Mg Doping of N-Polar, In-Rich InAlN.

Metal organic chemical vapor deposition was used to grow N-polar InAlN on sapphire substrates. P-doping was provided by a precursor flow of CpMg between 0 and 130 nmol/min, reaching a CpMg/III ratio of 8.3 × 10.

GaAs Nanomembranes in the High Electron Mobility Transistor Technology.

A 100 nm MOCVD-grown HEMT AlGaAs/InGaAs/GaAs heterostructure nanomembrane was released from the growth GaAs substrate by ELO using a 300 nm AlAs layer and transferred to sapphire. The heterostructure contained a strained 10 nm 2DEG InGaAs channel with a sheet electron concentration of 3.4 × 10 cm and Hall mobility of 4590 cmVs, which was grown close to the center of the heterostructure to suppress a significant bowing of the nanomembrane both during and after separation from the growth substrate.