A Thrifty Liquid-Phase Exfoliation (LPE) of MoSe and WSe Nanosheets as Channel Materials for FET Application.

Two-dimensional materials are trending nowadays because of their atomic thickness, layer-dependent properties, and their fascinating application in the semiconducting industry. In this work, we have synthesized MoSe and WSe nanosheets (NSs) via a liquid-phase exfoliation method and investigated these NSs as channel materials in field-effect transistors (FET). The x-ray diffraction (XRD) pattern revealed that the synthesized NSs have a 2H phase with 0.

Large Area Fabrication of Semiconducting Phosphorene by Langmuir-Blodgett Assembly.

Phosphorene is a recently new member of the family of two dimensional (2D) inorganic materials. Besides its synthesis it is of utmost importance to deposit this material as thin film in a way that represents a general applicability for 2D materials. Although a considerable number of solvent based methodologies have been developed for exfoliating black phosphorus, so far there are no reports on controlled organization of these exfoliated nanosheets on substrates.