Bandgap recovery of monolayer MoS using defect engineering and chemical doping.

Two-dimensional transition metal dichalcogenide materials have created avenues for exciting physics with unique electronic and photonic applications. Among these materials, molybdenum disulfide is the most known due to extensive research in understanding its electronic and optical properties. In this paper, we report on the successful growth and modification of monolayer MoS (1L MoS) by controlling carrier concentration and manipulating bandgap in order to improve the efficiency of light emission.