Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions.

We present an analysis of factors influencing carrier transport and electroluminescence (EL) at 1.5 µm from erbium-doped silicon-rich silica (SiOx) layers. The effects of both the active layer thickness and the Si-excess content on the electrical excitation of erbium are studied.

Thickness-dependent optimization of Er3+ light emission from silicon-rich silicon oxide thin films.

This study investigates the influence of the film thickness on the silicon-excess-mediated sensitization of Erbium ions in Si-rich silica. The Er3+ photoluminescence at 1.5 μm, normalized to the film thickness, was found five times larger for films 1 μm-thick than that from 50-nm-thick films intended for electrically driven devices.

An investigation on solid state reactions in heat treated Au/Pd thin films for electrodes applications.

The interface between metals and oxides is particularly interesting. It has been the main topic of many research projects to illustrate that their properties are highly dependent on the structure of the interface. Poor adhesion between gold films and oxides is well known.