Influence of the Structure of Hydrothermal-Synthesized TiO Nanowires Formed by Annealing on the Photocatalytic Reduction of CO in HO Vapor.

The present study investigates the photocatalytic properties of hydrothermally synthesized TiO nanowires (NWs) for CO reduction in HO vapor. It has been demonstrated that TiO NWs, thermally treated at 500-700 °C, demonstrate an almost tenfold higher yield of products compared to the known commercial powder TiO P25. It has been found that the best material is a combination of anatase, TiO-B and rutile.

Tailoring porous/filament silicon using the two-step Au-assisted chemical etching of p-type silicon for forming an ethanol electro-oxidation layer.

In this paper, we are reporting on the fabrication of a porous silicon/Au and silicon filament/Au using the two-step Au-assisted chemical etching of p-type Si with a specific resistivity of 0.01, 1, and 12 Ω·cm when varying the Au deposition times. The structure analysis results show that with an increasing Au deposition time of up to 7 min, the thickness of the porous Si layer increases for the same etching duration (60 min), and the morphology of the layer changes from porous to filamentary.

Peculiarities of Low-Temperature Behavior of Liquids Confined in Nanostructured Silicon-Based Material.

This study is devoted to the confinement effects on freezing and melting in electrochemical systems containing nanomaterial electrodes and liquid electrolytes. The melting of nanoparticles formed upon freezing of liquids confined in pores of disordered nanostructured -type silicon has been studied by low-temperature differential scanning calorimetry. Experimental results obtained for deionized water, an aqueous solution of potassium sulfate, and -decane are presented.

Influence of Illumination on Porous Silicon Formed by Photo-Assisted Etching of p-Type Si with a Different Doping Level.

The influence of illumination intensity and p-type silicon doping level on the dissolution rate of Si and total current by photo-assisted etching was studied. The impact of etching duration, illumination intensity, and wafer doping level on the etching process was investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM), and Ultraviolet-Visible Spectroscopy (UV-Vis-NIR). The silicon dissolution rate was found to be directly proportional to the illumination intensity and inversely proportional to the wafer resistivity.

Investigation of the Pd Nanoparticles-Assisted Chemical Etching of Silicon for Ethanol Solution Electrooxidation.

The formation of porous silicon by Pd nanoparticles-assisted chemical etching of single-crystal Si with resistivity = 0.01 Ω·cm at 25 °C, 50 °C and 75 °C in HF/HO/HO solution was studied. Porous layers of silicon were studied by optical and scanning electron microscopy, and gravimetric analysis.