Enhanced photoconductivity of hybrid 2D-QD MoS2-AgInS2 structures.

This study describes the fabrication of hybrid two-dimensional (2D)-quantum dot (QD) MoS2-AgInS2 photoconductive devices through the mechanical pressing of a MoS2 flake onto an AgInS2 QD film. The devices exhibit an enhanced photoresponse at both continuous and modulated optical excitations, compared with the bare MoS2 or AgInS2 layer, due to the formation of a built-in electric field near the MoS2/AgInS2 interface. The continuous wave photoresponse is significantly higher due to the effective photoconductive gain when electrons flow freely through the MoS2 flake, whereas holes are effectively trapped in AgInS2 QDs.

Defect influence on in-plane photocurrent of InAs/InGaAs quantum dot array: long-term electron trapping and Coulomb screening.

Metamorphic InAs/InGaAs and InAs/InGaAs quantum dot (QD) arrays are known to be photosensitive in the telecommunication ranges at 1.3 and 1.55 μm, respectively; however, for photonic applications of these nanostructures, the effect of levels related to defects still needs in-depth investigation.

Optical windows for head tissues in near-infrared and short-wave infrared regions: Approaching transcranial light applications.

Optical properties of the rat head tissues (brain cortex, cranial bone and scalp skin) are assessed, aiming at transcranial light applications such as optical imaging and phototherapy. The spectral measurements are carried out over the wide spectral range of 350 to 2800 nm, involving visible, near-infrared (NIR) and short-wave infrared (SWIR) regions. Four tissue transparency windows are considered: ~700 to 1000 nm (NIR-I), ~1000 to 1350 nm (NIR-II), ~1550 to 1870 nm (NIR-III or SWIR) and ~2100 to 2300 nm (SWIR-II).

Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3-1.55-μm Window.

Photoelectric properties of the metamorphic InAs/In GaAs quantum dot (QD) nanostructures were studied at room temperature, employing photoconductivity (PC) and photoluminescence spectroscopies, electrical measurements, and theoretical modeling. Four samples with different stoichiometry of In GaAs cladding layer have been grown: indium content x was 0.15, 0.