Influence of Annealing on the Dielectric Properties of Zn-SiO/Si Nanocomposites Obtained in "Hot" Implantation Conditions.

This paper presents the results of AC electrical measurements of Zn-SiO/Si nanocomposites obtained by ion implantation. Implantation of Zn ions was carried out into thermally oxidized p-type silicon substrates with energy of 150 keV and fluence of 7.5 × 10 ion·cm at a temperature of 773 K, and is thus called implantation in "hot" conditions.