Charge transport mechanism in the forming-free memristor based on silicon nitride.

Nonstoichiometric silicon nitride SiN is a promising material for developing a new generation of high-speed, reliable flash memory device based on the resistive effect. The advantage of silicon nitride over other dielectrics is its compatibility with the silicon technology. In the present work, a silicon nitride-based memristor deposited by the plasma-enhanced chemical vapor deposition method was studied.