Dominating Interlayer Resonant Energy Transfer in Type-II 2D Heterostructure.

Type-II heterostructures (HSs) are essential components of modern electronic and optoelectronic devices. Earlier studies have found that in type-II transition metal dichalcogenide (TMD) HSs, the dominating carrier relaxation pathway is the interlayer charge transfer (CT) mechanism. Here, this report shows that, in a type-II HS formed between monolayers of MoSe and ReS, nonradiative energy transfer (ET) from higher to lower work function material (ReS to MoSe) dominates over the traditional CT process with and a charge-blocking interlayer.