Controlling charge transport at the interfaces of nanostructures is crucial for their successful use in optoelectronic and solar energy applications. Mixed-dimensional heterostructures based on single-walled carbon nanotubes (SWCNTs) and transition metal dichalcogenides (TMDCs) have demonstrated exceptionally long-lived charge-separated states. However, the factors that control the charge transport at these interfaces remain unclear.
View Article and Find Full Text PDFIn halide perovskites, photocarriers can have strong polaronic interactions with point defects. For iodide-deficient MAPbI, we found that the Fermi level can shift significantly by 0.6-0.
View Article and Find Full Text PDFA-site cations in ABX metal halide perovskites do not contribute to the frontier electronic states. They influence optoelectronic properties indirectly through interaction with the BX sublattice. By systematically investigating correlated motions of Cs cations and the PbX lattice (X = Cl, Br, I), we demonstrate that the interaction between the two subsystems depends on electronegativity and size of the X-site anion.
View Article and Find Full Text PDFWide band gap AInSe (A = K, Rb, Cs) is an important interlayer material for improving the efficiency of Cu(In,Ga)(S,Se) (CIGS) solar cells. Compared to high-vacuum deposition and solid-state synthesis, a less energy-intensive method is of interest for its fabrication. Herein, we present the rapid, low-temperature colloidal synthesis of AInSe nanocrystals that opens a pathway for convenient solution processing.
View Article and Find Full Text PDFTwo-dimensional lead-halide perovskites provide a more robust alternative to three-dimensional perovskites in solar energy and optoelectronic applications due to increased chemical stability afforded by interlayer ligands. At the same time, the ligands create barriers for interlayer charge transport, reducing device performance. Using a recently developed ab initio simulation methodology, we demonstrate that ligand fluorination can enhance both hole and electron mobility by 1-2 orders of magnitude.
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