More Than 50 Years after Its Discovery in SiO Octahedral Coordination Has Also Been Established in SiS at High Pressure.

SiO exhibits a high-pressure-high-temperature polymorphism, leading to an increase in silicon coordination number and density. However, for the related compound SiS such pressure-induced behavior has not been observed with tetrahedral coordination yet. All four crystal structures of SiS known so far contain silicon with tetrahedral coordination.

Atomic and electronic structures evolution of the narrow band gap semiconductor Ag2Se under high pressure.

Non-trivial electronic properties of silver telluride and other chalcogenides, such as the presence of a topological insulator state, electronic topological transitions, metallization, and the possible emergence of superconductivity under pressure have attracted attention in recent years. In this work, we studied the electronic properties of silver selenide (Ag2Se). We performed direct current electrical resistivity measurements, in situ Raman spectroscopy, and synchrotron x-ray diffraction accompanied by ab initio calculations to explore pressure-induced changes to the atomic and electronic structure of Ag2Se.

Superconductivity in Weyl semimetal candidate MoTe2.

Transition metal dichalcogenides have attracted research interest over the last few decades due to their interesting structural chemistry, unusual electronic properties, rich intercalation chemistry and wide spectrum of potential applications. Despite the fact that the majority of related research focuses on semiconducting transition-metal dichalcogenides (for example, MoS2), recently discovered unexpected properties of WTe2 are provoking strong interest in semimetallic transition metal dichalcogenides featuring large magnetoresistance, pressure-driven superconductivity and Weyl semimetal states. We investigate the sister compound of WTe2, MoTe2, predicted to be a Weyl semimetal and a quantum spin Hall insulator in bulk and monolayer form, respectively.

Structure and electrical resistivity of mixed-valent EuNi2P2 at high pressure.

The structural properties and electrical resistivity of homogeneous mixed-valent EuNi2P2 are studied at pressures up to 45 GPa. No structural phase transition is observed in the whole pressure range and the overall pressure behavior of the structural parameters is similar to that of related compounds in the collapsed tetragonal ThCr2Si2-type structure. Electrical resistivity measured up to 31 GPa at temperatures between 4 and 300 K exhibits continuous changes from the behavior typical for a mixed-valent Eu system to that of a normal metallic system at pressures above 20 GPa, indicating a transition of the strongly mixed-valent Eu atoms with a valence ~2.

Solid-state amorphization of a quenched high-pressure GaSb phase studied by real-time neutron diffraction: evolution of the crystalline phase.

The amorphization of a quenched sample of the GaSb-II high-pressure phase was studied at ambient pressure by real-time neutron diffraction in the course of the sample heating from 100 K to room temperature at a rate of 0.4 K min(-1). The transformation to the amorphous state begins at 140 K and is completed near room temperature.