Growth of germanium on Au(111): formation of germanene or intermixing of Au and Ge atoms?

We studied the growth of Ge layers on Au(111) under ultra-high vacuum conditions from the submonolayer regime up to a few layers with Scanning Tunneling Microscopy (STM), Direct Recoiling Spectroscopy (DRS) and Low Energy Electron Diffraction (LEED). Most STM images for the thicker layers are consistent with a commensurate 5 × 8 arrangement. The high surface sensitivity of TOF-DRS allows us to confirm the coexistence of Au and Ge atoms in the top layer for all stages of growth.

Self-assembly of alkanedithiols on Au(111) from solution: effect of chain length and self-assembly conditions.

A comparative study on the adsorption of buthanedithiol (BDT), hexanedithiol (HDT), and nonanedithiol (NDT) on Au(111) from ethanolic and n-hexane solutions and two different preparation procedures is presented. SAM characterization is based on reflection-absorption infrared spectroscopy, electrochemistry, X-ray photoelectron spectroscopy, and time of flight direct recoil spectroscopy. Results indicate that one can obtain a standing-up phase of dithiols and that the amount of the precursor lying-down phase decreases from BDT to NDT, irrespective of the solvent and self-assembly conditions.

Assembly and thermal stability of thin EP-PTCDI films on Ag(111).

We report a multi-technique study of the adsorption kinetics and self-assembly characteristics of EP-PTCDI grown on Ag(111) at UHV conditions and room temperature. Changes in the valence band characteristics for the mono and the multilayer film and the stability as a function of the annealing temperature are discussed. The results show that the molecules start to adsorb on the step edges forming ordered islands that grow to fully cover a monolayer.

Gas phase formation of dense alkanethiol layers on GaAs(110).

We present a study of the growth and thermal stability of hexanethiol (C6) films on GaAs(110) by direct recoil spectroscopy with time-of-flight analysis. We compare our results with the better known case of C6 adsorption on Au(111). In contrast to the two-step adsorption kinetics observed for Au surfaces after lengthy exposures, data for C6 adsorption on the GaAs(110) surface are consistent with the formation of a single dense phase of C6 molecules at lower exposures.

Room-temperature kinetics of short-chain alkanethiol film growth on Ag(111) from the vapor phase.

We have used time-of-flight (TOF) direct recoiling spectroscopy (DRS) to follow propanethiol adsorption at 300 K from the vapor phase on an Ag(111) surface, for exposures ranging from 10(-1) to 10(5) L. Results show that the adsorption proceeds with changes in the sticking coefficient, consistent with at least three phases. At low exposures, the alkanethiol molecules adsorb with high probability at defect sites, followed by a slower growth mode that essentially covers the whole surface.