Composition dependence of penetration range and backscattering coefficient of electrons impinging on SiGe and GaAsN semiconducting alloys.

The alloy composition dependence of penetration range and backscattering coefficient of electrons normally impinging on SiGe and GaAsN semiconductor alloys targets for beam energies in the range 0.5-3.5 keV has been investigated.

Pseudopotential calculations of AlSb under pressure.

The dependence on hydrostatic pressure of the electronic and optical properties of zinc-blende AlSb semiconducting material in the pressure range of 0-20kbar has been reported using a pseudopotential approach. At zero pressure, our findings showed that the electron and heavy hole effective masses are 0.11 and 0.

Dynamical (e, 2e) studies using tetrahydrofuran as a DNA analog.

Triple differential cross sections for the electron-impact ionization of the outer valence orbital of tetrahydrofuran have been measured using the (e, 2e) technique. The measurements have been performed with coplanar asymmetric kinematics, at an incident electron energy of 250 eV and at an ejected electron energy of 10 eV, over a range of momentum transfers. The experimental results are compared with theoretical calculations carried out using the molecular three-body distorted wave model.

Fivefold differential cross sections for ground-state ionization of aligned H(2) by electron impact.

We discuss the ionization of aligned hydrogen molecules into their ionic ground state by 200 eV electrons. Using a reaction microscope, the complete electron scattering kinematics is imaged over a large solid angle. Simultaneously, the molecular alignment is derived from postcollision dissociation of the residual ion.