Phosphonic Acids for Interfacial Engineering of Transparent Conductive Oxides.

Transparent conducting oxides (TCOs), such as indium tin oxide and zinc oxide, play an important role as electrode materials in organic-semiconductor devices. The properties of the inorganic-organic interface-the offset between the TCO Fermi level and the relevant transport level, the extent to which the organic semiconductor can wet the oxide surface, and the influence of the surface on semiconductor morphology-significantly affect device performance. This review surveys the literature on TCO modification with phosphonic acids (PAs), which has increasingly been used to engineer these interfacial properties.

Enhanced permittivity and energy density in neat poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene) terpolymer films through control of morphology.

Polymer materials with large dielectric constants are desirable for the development of high energy density capacitors. We show that the dielectric properties of poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene) [P(VDF-TrFE-CTFE)] can be improved by the use of processing conditions that favor formation of a highly crystalline morphology of the nonpolar α-phase. Through the use of spin coating, thermal treatment above the melting temperature, and quenching, we were able to attain a highly crystalline, α-phase rich morphology that has a quite large dielectric constant of 77 ± 10 at 1 kHz.

High-energy-density sol-gel thin film based on neat 2-cyanoethyltrimethoxysilane.

Hybrid organic-inorganic sol-gel dielectric thin films from a neat 2-cyanoethyltrimethoxysilane (CNETMS) precursor have been fabricated and their permittivity, dielectric strength, and energy density characterized. CNETMS sol-gel films possess compact, polar cyanoethyl groups and exhibit a relative permittivity of 20 at 1 kHz and breakdown strengths ranging from 650 V/μm to 250 V/μm for film thicknesses of 1.3 to 3.