Physical Operations of a Self-Powered IZTO/β-GaO Schottky Barrier Diode Photodetector.

In this work, a self-powered, solar-blind photodetector, based on InZnSnO (IZTO) as a Schottky contact, was deposited on the top of Si-doped β-GaO by the sputtering of two-faced targets with InSnO (ITO) as an ohmic contact. A detailed numerical simulation was performed by using the measured J-V characteristics of IZTO/β-GaO Schottky barrier diodes (SBDs) in the dark. Good agreement between the simulation and the measurement was achieved by studying the effect of the IZTO workfunction, β-GaO interfacial layer (IL) electron affinity, and the concentrations of interfacial traps.

Control of Ni/β-GaO Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer.

Controlling the Schottky barrier height (ϕB) and other parameters of Schottky barrier diodes (SBD) is critical for many applications. In this work, the effect of inserting a graphene interfacial monolayer between a Ni Schottky metal and a β-Ga2O3 semiconductor was investigated using numerical simulation. We confirmed that the simulation-based on Ni workfunction, interfacial trap concentration, and surface electron affinity was well-matched with the actual device characterization.

Effects of high-k gate dielectrics on the electrical performance and reliability of an amorphous indium-tin-zinc-oxide thin film transistor (a-ITZO TFT): an analytical survey.

This study is a numerical simulation obtained by using Silvaco Atlas software to investigate the effect of different types of dielectric layers, inserted between the channel and the gate, on the performance and reliability of an a-ITZO TFT. Replacing the SiO2 oxide layer with a high-k dielectric layer gives the concept of the electrical thickness, known by the equivalent oxide thickness (EOT) in which the physical thickness (PT) can be increased to improve the device reliability without increasing the effective thickness of the gate dielectric. A range of different high-k dielectric materials was suggested.