High-aspect-ratio structure fabrication on (110)-oriented silicon surfaces using tribo-nanolithography.

This study investigated methods of fabricating high-aspect-ratio structures on a silicon surface using a combination of tribo-nanolithography and wet chemical etching. Tribo-nanolithography forms an amorphous phase on a single-crystal silicon surface that has an etch resistance against potassium hydroxide so that a protruding structure can be fabricated by wet chemical etching. To fabricate high-aspect-ratio structures, (110)-oriented silicon was used, and the effect of machining parameters on the structure shape was investigated.

Three-dimensional fabrication on GaAs surfaces using electron-beam-induced carbon deposition followed by wet chemical etching.

We propose a method for fabricating three-dimensional structures on GaAs surfaces using electron beam (EB) irradiation followed by wet chemical etching. An etch-resistant hydrocarbon layer forms on the GaAs surface with the EB irradiation. Structures can be fabricated after etching using the hydrocarbon layer to block the etching.

Highly charged ion beam applied to lithography technique.

In various fields of nanotechnology, the importance of nanoscale three-dimensional (3D) structures is increasing. In order to develop an efficient process to fabricate nanoscale 3D structures, we have applied highly charged ion (HCI) beams to the ion-beam lithography (IBL) technique. Ar-ion beams with various charge states (1+ to 9+) were applied to fabricate spin on glass (SOG) and Si by means of the IBL technique.