Addressing Mobility Overestimation in Short-Channel IGZO TFTs Using the Gated Van der Pauw Method.

The determination of field-effect mobility in indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) is pivotal for advancing high-performance electronic devices. However, accurately evaluating the field-effect mobility in IGZO-TFTs with short channel lengths of less than a few micrometers poses a formidable challenge. This difficulty arises due to the increasing significance of contact resistance in the total resistance as the channel length decreases.

Formation techniques for upper active channel in monolithic 3D integration: an overview.

The concept of three-dimensional stacking of device layers has attracted significant attention with the increasing difficulty in scaling down devices. Monolithic 3D (M3D) integration provides a notable benefit in achieving a higher connection density between upper and lower device layers than through-via-silicon. Nevertheless, the practical implementation of M3D integration into commercial production faces several technological challenges.

Boron-Based Multi-Resonance TADF Emitter with Suppressed Intermolecular Interaction and Isomer Formation for Efficient Pure Blue OLEDs.

Multi-resonance (MR) thermally activated delayed fluorescent (TADF) emitters are highly attractive due to their superior color purity as well as efficient light-harvesting ability from singlets and triplets. However, boron and nitrogen-based MR-TADF emitters suffer from their strong π-π interaction owing to their rigid flat cores. Herein, a boron-based multi-resonance blue TADF emitter with suppressed intermolecular interaction and isomer formation is developed through a simple synthetic process by introducing meta-xylene and meta-phenyphenyl groups to the core.