Field-dependent abundances of hydride molecular ions in atom probe tomography of III-N semiconductors.

We investigate the microscopic behaviour of hydrogen-containing species formed on the surface of III-N semiconductor samples by the residual hydrogen in the analysis chamber in laser-assisted atom probe tomography (APT). We analysed AlGaN/GaN heterostructures containing alternate layers with a thickness of about 20 nm. The formation of H-containing species occurs at field strengths between 22 and 26 V/nm and is independent of the analysed samples.

Enhancement of Single-Photon Purity and Coherence of III-Nitride Quantum Dot with Polarization-Controlled Quasi-Resonant Excitation.

III-Nitride semiconductor-based quantum dots (QDs) play an essential role in solid-state quantum light sources because of their potential for room-temperature operation. However, undesired background emission from the surroundings deteriorates single-photon purity. Moreover, spectral diffusion causes inhomogeneous broadening and limits the applications of QDs in quantum photonic technologies.

Electromechanical conversion efficiency of GaN NWs: critical influence of the NW stiffness, the Schottky nano-contact and the surface charge effects.

The piezoelectric nanowires (NWs) are considered as promising nanomaterials to develop high-efficient piezoelectric generators. Establishing the relationship between their characteristics and their piezoelectric conversion properties is now essential to further improve the devices. However, due to their nanoscale dimensions, the NWs are characterized by new properties that are challenging to investigate.

Heat Dissipation in Flexible Nitride Nanowire Light-Emitting Diodes.

We analyze the thermal behavior of a flexible nanowire (NW) light-emitting diode (LED) operated under different injection conditions. The LED is based on metal-organic vapor-phase deposition (MOCVD)-grown self-assembled InGaN/GaN NWs in a polydimethylsiloxane (PDMS) matrix. Despite the poor thermal conductivity of the polymer, active nitride NWs effectively dissipate heat to the substrate.

1D Nanostructure-Based Piezo-Generators.

With the amount of connected objects constantly on the rise, both in our daily life and in high-technology applications, it becomes critical to deal with their associated increase in energy consumption [...

High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires.

We demonstrate for the first time the efficient mechanical-electrical conversion properties of InGaN/GaN nanowires (NWs). Using an atomic force microscope equipped with a modified Resiscope module, we analyse the piezoelectric energy generation of GaN NWs and demonstrate an important enhancement when integrating in their volume a thick In-rich InGaN insertion. The piezoelectric response of InGaN/GaN NWs can be tuned as a function of the InGaN insertion thickness and position in the NW volume.

Energy harvesting efficiency in GaN nanowire-based nanogenerators: the critical influence of the Schottky nanocontact.

The performances of 1D-nanostructure based nanogenerators are governed by the ability of nanostructures to efficiently convert mechanical deformation into electrical energy, and by the efficiency with which this piezo-generated energy is harvested. In this paper, we highlight the crucial influence of the GaN nanowire-metal Schottky nanocontact on the energy harvesting efficiency. Three different metals, p-type doped diamond, PtSi and Pt/Ir, have been investigated.

Wavelength tunable ultrafast fiber laser via reflective mirror with taper structure.

Laser sources with a controllable flexible wavelength have found widespread applications in optical fiber communication, optical sensing, and microscopy. Here, we report a tunable mode-locked fiber laser using a graphene-based saturable absorber and a tapered mirror as an end mirror in the cavity. The phase layer in the mirror is precisely etched by focused ion beam (FIB) milling technology, and the resonant wavelength of the mirror shifts correspond to the different etch depths.

Large area graphene nanomesh: an artificial platform for edge-electrochemical biosensing at the sub-attomolar level.

Recent advances in large area graphene growth have led to tremendous applications in a variety of areas. The graphene nanomesh with its tunable band-gap is of great interest for both fundamental research, to explore the effect of edges on both the 2D electrical conduction and its electrochemical behavior, and applications such as nanoelectronic devices or highly sensitive biosensors. Here, we report on the fabrication of a large surface graphene nanomesh by nanoimprint lithography (NIL) to produce controlled artificial edges.

Epitaxy of GaN Nanowires on Graphene.

Epitaxial growth of GaN nanowires on graphene is demonstrated using molecular beam epitaxy without any catalyst or intermediate layer. Growth is highly selective with respect to silica on which the graphene flakes, grown by chemical vapor deposition, are transferred. The nanowires grow vertically along their c-axis and we observe a unique epitaxial relationship with the ⟨21̅1̅0⟩ directions of the wurtzite GaN lattice parallel to the directions of the carbon zigzag chains.

Investigation of structural and electronic properties of epitaxial graphene on 3C-SiC(100)/Si(100) substrates.

Graphene has been intensively studied in recent years in order to take advantage of its unique properties. Its synthesis on SiC substrates by solid-state graphitization appears a suitable option for graphene-based electronics. However, before developing devices based on epitaxial graphene, it is desirable to understand and finely control the synthesis of material with the most promising properties.