Cathodoluminescence Spectroscopic Stress Analysis for Silicon Oxide Film and Its Damage Evaluation.

We describe the stress analysis of silicon oxide (SiO) thin film using cathodoluminescence (CL) spectroscopy and discuss its availability in this paper. To directly measure the CL spectra of the film under uniaxial tensile stresses, specially developed uniaxial tensile test equipment is used in a scanning electron microscope (SEM) equipped with a CL system. As tensile stress increases, the peak position and intensity proportionally increase.