Hydrogen iodide (HI) neutral beam etching characteristics of InGaN and GaN for micro-LED fabrication.

We investigated the etching characteristics of hydrogen iodide (HI) neutral beam etching (NBE) of GaN and InGaN and compared with ClNBE. We showed the advantages of HI NBE versus ClNBE, namely: higher InGaN etch rate, better surface smoothness, and significantly reduced etching residues. Moreover, HI NBE was suppressed of yellow luminescence compared with Clplasma.