Laser-Induced Crystallization of Copper Oxide Thin Films: A Comparison between Gaussian and Chevron Beam Profiles.

The use of a laser with a Gaussian-beam profile is frequently adopted in attempts of crystallizing nonsingle-crystal thin films; however, it merely results in the formation of polycrystal thin films. In this paper, selective area crystallization of nonsingle-crystal copper(II) oxide (CuO) is described. The crystallization is induced by laser, laser-induced crystallization, with a beam profile in the shape of a chevron.

Ionic liquid multistate resistive switching characteristics in two terminal soft and flexible discrete channels for neuromorphic computing.

By exploiting ion transport phenomena in a soft and flexible discrete channel, liquid material conductance can be controlled by using an electrical input signal, which results in analog neuromorphic behavior. This paper proposes an ionic liquid (IL) multistate resistive switching device capable of mimicking synapse analog behavior by using IL BMIM FeCL and HO into the two ends of a discrete polydimethylsiloxane (PDMS) channel. The spike rate-dependent plasticity (SRDP) and spike-timing-dependent plasticity (STDP) behavior are highly stable by modulating the input signal.

Visualization and Manipulation of Bilayer Graphene Quantum Dots with Broken Rotational Symmetry and Nontrivial Topology.

Electrostatically defined quantum dots (QDs) in Bernal stacked bilayer graphene (BLG) are a promising quantum information platform because of their long spin decoherence times, high sample quality, and tunability. Importantly, the shape of QD states determines the electron energy spectrum, the interactions between electrons, and the coupling of electrons to their environment, all of which are relevant for quantum information processing. Despite its importance, the shape of BLG QD states remains experimentally unexamined.

Demonstration of Sputtering Atomic Layer Augmented Deposition: Aluminum Oxide-Copper Dielectric-Metal Nanocomposite Thin Films.

Designing a thin-film structure often begins with choosing a film deposition method that employs a specific process by which chemical species are formed and transported; in other words, a film deposition system in which two deposition methods are hybridized should lead to new ways of designing thin-film structures. This premise inspires us to combine atomic layer deposition (ALD) and magnetron sputtering (SPU) within a single chamber-supttering atomic layer augmented deposition (SALAD). SALAD takes full advantage of both ALD's precise and accurate precursor delivery and SPU's versatility in choosing chemical elements.

Scaling Atomic Layer Deposition to Astronomical Optic Sizes: Low-Temperature Aluminum Oxide in a Meter-Sized Chamber.

Atomic Layer Deposition (ALD) is very attractive for producing optical quality thin films, including transparent barrier films on metal-coated astronomical mirrors. To date, ALD of mirror coatings has been limited to relatively small-sized substrates. A new ALD tool has been designed, constructed, and tested to apply uniform protective coatings over a 0.

Resistive switching device with highly asymmetric current-voltage characteristics: a solution to backward sneak current in passive crossbar arrays.

With the view towards future non-volatile random access memories that can be integrated at a large scale, extensive study on resistive switching (RS) devices arranged in a crossbar array is currently underway. Although the crossbar array architecture offers relatively simple and acceptable scalability, the presence of sneak current is recognized as a critical issue that needs to be resolved at device level. In addressing this issue, we demonstrate a new type of RS device fabricated by combining graphene oxide (G-O) and zinc oxide (ZnO) with highly asymmetric current-voltage (I-V) characteristics depending on the polarity of bias voltage.

Design Parameters for Subwavelength Transparent Conductive Nanolattices.

Recent advancements with the directed assembly of block copolymers have enabled the fabrication over cm areas of highly ordered metal nanowire meshes, or nanolattices, which are of significant interest as transparent electrodes. Compared to randomly dispersed metal nanowire networks that have long been considered the most promising next-generation transparent electrode material, such ordered nanolattices represent a new design paradigm that is yet to be optimized. Here, through optical and electrical simulations, we explore the potential design parameters for such nanolattices as transparent conductive electrodes, elucidating relationships between the nanowire dimensions, defects, and the nanolattices' conductivity and transmissivity.

Silver Film Surface Modification by Ion Bombardment Decreases Surface Plasmon Resonance Absorption.

Silver thin films covered with dielectric films serving as protective coatings are desired for telescope mirrors, but durable coatings have proved elusive. As part of an effort to develop long-lived protected-silver mirrors, silver thin films were deposited by electron beam evaporation using a physical vapor deposition system at the University of California Observatories Astronomical Coatings Lab. The silver films were later covered with a stack of dielectric films utilizing silicon nitride and titanium dioxide deposited by ion-assisted electron beam evaporation to fabricate protected mirrors.

Reflectometry-Ellipsometry Reveals Thickness, Growth Rate, and Phase Composition in Oxidation of Copper.

The oxidation of copper is a complicated process. Copper oxide develops two stable phases at room temperature and standard pressure (RTSP): cuprous oxide (Cu2O) and cupric oxide (CuO). Both phases have different optical and electrical characteristics that make them interesting for applications such as solar cells or resistive switching devices.

Phenomenological Model of the Growth of Ultrasmooth Silver Thin Films Deposited with a Germanium Nucleation Layer.

The structural properties of optically thin (15 nm) silver (Ag) films deposited on SiO2/Si(100) substrates with a germanium (Ge) nucleation layer were studied. The morphological and crystallographical characteristics of Ag thin films with different Ge nucleation layer thicknesses were assessed by cross-sectional transmission electron microscopy (XTEM), reflection high-energy electron diffraction (RHEED), X-ray diffractometry (XRD), grazing incidence X-ray diffractometry (GIXRD), X-ray reflection (XRR), and Fourier transform infrared spectroscopy (FTIR). The surface roughness of Ag thin films was found to decrease significantly by inserting a Ge nucleation layer with a thickness in the range of 1 to 2 nm (i.

Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch.

Highly reproducible bipolar resistance switching was recently demonstrated in a composite material of Pt nanoparticles dispersed in silicon dioxide. Here, we examine the electrical performance and scalability of this system and demonstrate devices with ultrafast (<100 ps) switching, long state retention (no measurable relaxation after 6 months), and high endurance (>3 × 10(7) cycles). A possible switching mechanism based on ion motion in the film is discussed based on these observations.

Room-temperature Coulomb staircase in semiconducting InP nanowires modulated with light illumination.

Detailed electron transport analysis is performed for an ensemble of conical indium phosphide nanowires bridging two hydrogenated n(+)-silicon electrodes. The current-voltage (I-V) characteristics exhibit a Coulomb staircase in the dark with a period of ∼ 1 V at room temperature. The staircase is found to disappear under light illumination.

Optical properties of indium phosphide nanowire ensembles at various temperatures.

Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects of differing lattice types, geometries, and crystallographic orientations present within an ensemble of nanowires grown on non-single crystalline surfaces. In the photoluminescence spectra, a typical Varshni dependence of band gap energy on temperature was observed for emissions from zincblende nanowires and in the high temperature regime energy transfer from excitonic transitions and band-edge transitions was identified.

Ultrasmooth silver thin films deposited with a germanium nucleation layer.

We demonstrate an effective method for depositing smooth silver (Ag) films on SiO(2)/Si(100) substrates using a thin seed layer of evaporated germanium (Ge). The deposited Ag films exhibit smaller root-mean-square surface roughness, narrower peak-to-valley surface topological height distribution, smaller grain-size distribution, and smaller sheet resistance in comparison to those of Ag films directly deposited on SiO(2)/Si(100) substrates. Optically thin ( approximately 10-20 nm) Ag films deposited with approximately 1-2 nm Ge nucleation layers show more than an order of magnitude improvement in the surface roughness.