Optical characterization of In-flushed InAs/GaAs quantum dots emitting a broadband spectrum with multiple peaks at ~1 μm.

We investigated optical properties of In-flushed InAs quantum dots (QDs) grown on a GaAs substrate by molecular beam epitaxy. By using the In-flush technique for setting the height of self-assembled InAs QDs, we have tuned the emission wavelength of InAs QDs to the ~1 μm regime, which can be utilized as a non-invasive and deeply penetrative probe for biological and medical imaging systems. The controlled emission exhibited a broadband spectrum comprising multiple peaks with an interval of approximately 30 meV.

High transmission recovery of slow light in a photonic crystal waveguide using a hetero groupvelocity waveguide.

High transmission of slow-light in a photonic crystal (PC) waveguide (WG) using a hetero group-velocity (Ht-V(g)) PC-WG was proposed and experimentally investigated. The Ht-V(g) WG, which comprises a low-group-velocity (L-V(g)) PC-WG section between two identical high-group- velocity (H-V(g)) PC-WGs, is designed to decrease the impedance mismatch of the L-V(g) PC-WG. The increase in transmittance of a propagating pulse was confirmed in the Ht-V(g) PC-WG even in the vicinity of the band-gap, whereas the homogeneous PC-WG showed a gradual decrease in transmittance with the pulse wavelength approaching the band-gap.

Broadband waveguide intersection with low crosstalk in two-dimensional photonic crystal circuits by using topology optimization.

Topology optimization has been used to design intersections in two-dimensional photonic crystal slab waveguides. We have experimentally confirmed that the optimized intersection displays high-transmittance with low-crosstalk for the straightforward beam-propagation line.

Significant enhancement of ferromagnetism in Zn1-xCrxTe doped with iodine as an n-type dopant.

The effect of additional doping of charge impurities was investigated in a ferromagnetic semiconductor Zn1-xCrxTe. It was found that the doping of iodine, which is expected to act as an n-type dopant in ZnTe, brought about a drastic enhancement of the ferromagnetism in Zn1-xCrxTe, while the grown films remained electrically insulating. In particular, at a fixed Cr composition of x=0.

Growth of silicon nanowires on H-terminated Si {111} surface templates studied by transmission electron microscopy.

We have studied the growth of silicon nanowires (SiNWs) by means of transmission electron microscopy. SiNWs are grown from nanocatalysts via the Vapor-Liquid-Solid (VLS) mechanism using silane (SiH4) gas as a source gas. The nanocatalysts are prepared on a hydrogen (H)-terminated Si surface.