Effects of electron back-scattering in observations of cross-sectioned GaAs/AlAs superlattice with auger electron spectroscopy.

Cross-sections of GaAs/AlAs thin films prepared by cleavage of MBE-grown superlattices have been analyzed with Auger electron spectroscopy with a spatial resolution of 6 nm. Elemental distributions of Ga, Al, and As were clearly distinguished in line analysis as well as in two dimensional mapping for 50, 20, and 10 nm thin film structures. We have found an oscillation of Al KLL peak position between the two values while the peak positions of Ga LMM and As LMM remain constant.

Novel method for site-controlled surface nanodot fabrication by ion beam synthesis.

By using a Ga FIB system to spatially control the implantation of Ga into SiO(2) followed by vacuum annealing, we have fabricated self-assembled surface Ga nanodots with a high degree of control of nucleation location. The morphology of the Ga nanodots is closely related to Ga dose, showing a critical dose needed for nucleation that results in Ga nanodot formation just below the surface, while at higher doses Ga nanodots form on the surface as metallic Ga droplets. Possible applications include defining nucleation sites for subsequent growth, use as Ga source for GaN or GaAs quantum dots, or as catalyst for nanowire growth.