Effect of (Sm, In) Doping on the Electrical and Thermal Properties of SbTe Microstructures.

Doped SbTe narrow-band-gap semiconductors have been attracting considerable attention for different electronic and thermoelectric applications. Trivalent samarium (Sm)- and indium (In)-doped SbTe microstructures have been synthesized by the economical solvothermal method. Powder X-ray diffraction (PXRD) was used to verify the synthesis of single-phase doped and undoped SbTe and doping of Sm and In within the crystal lattice of SbTe.