Publications by authors named "Nishat Tasnim Hiramony"
The emergence of reconfigurable field effect transistors has introduced a more efficient method for realizing reconfigurable circuits, significantly lowering hardware overhead and enhancing versatility. However, these devices often suffer from asymmetric transfer curves, impacting logic gate performance and reliability. This work investigates the use of the van der Waals junction field effect transistor (JFET) for reconfigurable circuit applications.
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- A new heterobilayer composed of plumbene and hexagonal boron nitride (hBN) shows unique structural, electronic, and optical features, with three proposed stacking patterns examined using density functional theory.
- All configurations demonstrate direct band gaps between 0.399 eV and 0.432 eV due to spin-orbit coupling, while plumbene alone has an indirect band gap, indicating stable structures for practical applications.
- The study reveals low effective masses for charge carriers, enhancing transport in electronic devices, and shows that applying compressive biaxial strain can switch the material from a semiconductor to a metallic state, highlighting its potential in solar cells and UV photodetectors.
Two-dimensional Quantum Spin Hall (QSH) insulators featuring edge states that are topologically protected against back-scattering are arising as a novel state of quantum matter. One of the major obstacles to finding QSH insulators operable at room temperature is the insufficiency of suitable materials demonstrating the QSH effect with a large bulk band gap. Plumbene, the latest group-IV graphene analogous material, shows a large SOC-induced band gap opening but the coupling between topological states at different momentum points makes it a topologically trivial insulator.
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