Nanoprofiles evaluation of ZnO thin films by an evanescent light method.

The extraction efficiency of evanescent light from ZnO nanolayers and their thickness profiles in the range of (1-105) nm was evaluated by a new microscopy technique, differential evanescent light intensity imaging method. It is based on capturing the evanescent light scattered by the layer of the material deposited on glass substrates. The analyzed ZnO films were obtained by pulsed laser deposition at 27°C and 100°C, using a nanosecond UV laser source.

Measuring nanolayer profiles of various materials by evanescent light technique.

The evanescent light photon extraction efficiency of insulator, semiconductor and conductor amorphous nanolayers deposited on glass waveguides was evaluated from Differential Evanescent Light Intensity measurements. The Differential Evanescent Light Intensity technique uses the evanescent field scattered by the deposited nanolayer, enabling nanometer thickness profiling due to the high inherent dark background contrast. The results show that the effective evanescent photon penetration depth increases from metal to semiconductor and then to insulating layers, establishing thus the effective photon-material interaction length for the various materials classes.