The potential of strained DOTFET technology is demonstrated. This technology uses a SiGe island as a stressor for a Si capping layer, into which the transistor channel is integrated. The structure information of fabricated samples is extracted from atomic force microscopy (AFM) measurements.
View Article and Find Full Text PDFFor advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor.
View Article and Find Full Text PDF© LitMetric 2025. All rights reserved.