Submicron-Size Emitters of the 1.2-1.55 μm Spectral Range Based on InP/InAsP/InP Nanostructures Integrated into Si Substrate.

We study photoluminescence of InP/InAsP/InP nanostructures monolithically integrated to a Si(100) substrate. The InP/InAsP/InP nanostructures were grown in pre-formed pits in the silicon substrate using an original approach based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy method. This approach provides the selective-area synthesis of the ordered emitters arrays on Si substrates.