Biaxial Strain Transfer in Monolayer MoS and WSe Transistor Structures.

Monolayer transition metal dichalcogenides are intensely explored as active materials in 2D material-based devices due to their potential to overcome device size limitations, sub-nanometric thickness, and robust mechanical properties. Considering their large band gap sensitivity to mechanical strain, single-layered TMDs are well-suited for strain-engineered devices. While the impact of various types of mechanical strain on the properties of a variety of TMDs has been studied in the past, TMD-based devices have rarely been studied under mechanical deformations, with uniaxial strain being the most common one.