High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide.

The high-frequency performance of transistors is usually assessed by speed and gain figures of merit, such as the maximum oscillation frequency f , cutoff frequency f , ratio f /f , forward transmission coefficient S , and open-circuit voltage gain A . All these figures of merit must be as large as possible for transistors to be useful in practical electronics applications. Here we demonstrate high-performance graphene field-effect transistors (GFETs) with a thin AlOx gate dielectric which outperform previous state-of-the-art GFETs: we obtained f /f  > 3, A  > 30 dB, and S  = 12.

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication.

In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties.