2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters.

This article describes GaN/AlN heterostructures for ultraviolet-C (UVC) emitters with multiple (up to 400 periods) two-dimensional (2D)-quantum disk/quantum well structures with the same GaN nominal thicknesses of 1.5 and 16 ML-thick AlN barrier layers, which were grown by plasma-assisted molecular-beam epitaxy in a wide range of gallium and activated nitrogen flux ratios (Ga/N*) on -sapphire substrates. An increase in the Ga/N* ratio from 1.

Monolayer-Scale GaN/AlN Multiple Quantum Wells for High Power e-Beam Pumped UV-Emitters in the 240-270 nm Spectral Range.

Monolayer (ML)-scale GaN/AlN multiple quantum well (MQW) structures for electron-beam-pumped ultraviolet (UV) emitters are grown on -sapphire substrates by using plasma-assisted molecular beam epitaxy under controllable metal-rich conditions, which provides the spiral growth of densely packed atomically smooth hillocks without metal droplets. These structures have ML-stepped terrace-like surface topology in the entire QW thickness range from 0.75-7 ML and absence of stress at the well thickness below 2 ML.