Publications by authors named "Niels R Walet"

The study of moiré engineering started with the advent of van der Waals heterostructures, in which stacking 2D layers with different lattice constants leads to a moiré pattern controlling their electronic properties. The field entered a new era when it was found that adjusting the twist between two graphene layers led to strongly-correlated-electron physics and topological effects associated with atomic relaxation. A twist is now routinely used to adjust the properties of 2D materials.

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We analyze the effect of twists on the electronic structure of configurations of infinite stacks of graphene layers. We focus on three different cases: an infinite stack where each layer is rotated with respect to the previous one by a fixed angle, two pieces of semi-infinite graphite rotated with respect to each other, and finally a single layer of graphene rotated with respect to a graphite surface. In all three cases, we find a rich structure, with sharp resonances and flat bands for small twist angles.

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Bilayer graphene twisted by a small angle shows a significant charge modulation away from neutrality, as the charge in the narrow bands near the Dirac point is mostly localized in a fraction of the Moiré unit cell. The resulting electrostatic potential leads to a filling-dependent change in the low-energy bands, of a magnitude comparable to or larger than the bandwidth. These modifications can be expressed in terms of new electron-electron interactions, which, when expressed in a local basis, describe electron-assisted hopping terms.

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We study the existence of edge modes in gapped moiré superlattices of graphene monolayer ribbons on a hexagonal boron nitride substrate. We find that the superlattice bands acquire finite Chern numbers, which lead to a valley Hall effect. The presence of dispersive edge modes is confirmed by calculations of the band structure of realistic nanoribbons using tight binding methods.

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