Detection of nitrogen dioxide using mixed tungsten oxide-based thick film semiconductor sensor.

The thick film semiconductor sensor for NO(2) gas detection was fabricated by screen-printing method using a mixed WO(3)-based as sensing material. The sensing characteristics, such as response time, response linearity, sensitivity, working range, cross sensitivity, and long-term stability were further studied by using a WO(3)-based mixed with different metal oxides (SnO(2), TiO(2) and In(2)O(3)) and doped with noble metals (Au, Pd and Pt) as sensing materials was observed. The highest sensitivity for low concentrations (<16 mg l(-1)) was observed using WO(3)-based mixed with In(2)O(3) or TiO(2).